TP44200SG Tagore Technology
Виробник: Tagore Technology
Description: GAN FET HEMT 650V .236OHM 22QFN
Packaging: Cut Tape (CT)
Package / Case: 22-PowerVFQFN
Mounting Type: Surface Mount
Configuration: P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 236mOhm @ 500mA, 6V
Vgs(th) (Max) @ Id: 2.5V @ 5.5mA
Supplier Device Package: 22-QFN (5x7)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V, 6V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Voltage - Rated: 650 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 55 pF @ 400 V
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 218.52 грн |
| 10+ | 182.00 грн |
| 100+ | 157.55 грн |
| 500+ | 118.41 грн |
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Технічний опис TP44200SG Tagore Technology
Description: GAN FET HEMT 650V .236OHM 22QFN, Packaging: Tape & Reel (TR), Package / Case: 22-PowerVFQFN, Mounting Type: Surface Mount, Configuration: P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Tc), Rds On (Max) @ Id, Vgs: 236mOhm @ 500mA, 6V, Vgs(th) (Max) @ Id: 2.5V @ 5.5mA, Supplier Device Package: 22-QFN (5x7), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 0V, 6V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Voltage - Rated: 650 V, Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 6 V, Input Capacitance (Ciss) (Max) @ Vds: 55 pF @ 400 V.
Інші пропозиції TP44200SG
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
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TP44200SG | Tagore Technology |
Description: GAN FET HEMT 650V .236OHM 22QFN Packaging: Tape & Reel (TR) Package / Case: 22-PowerVFQFN Mounting Type: Surface Mount Configuration: P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 236mOhm @ 500mA, 6V Vgs(th) (Max) @ Id: 2.5V @ 5.5mA Supplier Device Package: 22-QFN (5x7) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 0V, 6V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Voltage - Rated: 650 V Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 55 pF @ 400 V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. |
| TP44200SG |
|
Виробник: Tagore Technology
Description: GAN FET HEMT 650V .236OHM 22QFN
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerVFQFN
Mounting Type: Surface Mount
Configuration: P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 236mOhm @ 500mA, 6V
Vgs(th) (Max) @ Id: 2.5V @ 5.5mA
Supplier Device Package: 22-QFN (5x7)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V, 6V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Voltage - Rated: 650 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 55 pF @ 400 V
Description: GAN FET HEMT 650V .236OHM 22QFN
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerVFQFN
Mounting Type: Surface Mount
Configuration: P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 236mOhm @ 500mA, 6V
Vgs(th) (Max) @ Id: 2.5V @ 5.5mA
Supplier Device Package: 22-QFN (5x7)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V, 6V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Voltage - Rated: 650 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 55 pF @ 400 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.