TP44400SG

TP44400SG Tagore Technology


TP44400SG-Rev1.2.pdf Виробник: Tagore Technology
Description: GAN FET HEMT 650V .36OHM 22QFN
Packaging: Cut Tape (CT)
Package / Case: 22-PowerVFQFN
Mounting Type: Surface Mount
Configuration: P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 500mA, 6V
Vgs(th) (Max) @ Id: 2.5V @ 2.8mA
Supplier Device Package: 22-QFN (5x7)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V, 6V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Voltage - Rated: 650 V
Gate Charge (Qg) (Max) @ Vgs: 0.75 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 28 pF @ 400 V
на замовлення 2970 шт:

термін постачання 21-31 дні (днів)
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Технічний опис TP44400SG Tagore Technology

Description: GAN FET HEMT 650V .36OHM 22QFN, Packaging: Tape & Reel (TR), Package / Case: 22-PowerVFQFN, Mounting Type: Surface Mount, Configuration: P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc), Rds On (Max) @ Id, Vgs: 360mOhm @ 500mA, 6V, Vgs(th) (Max) @ Id: 2.5V @ 2.8mA, Supplier Device Package: 22-QFN (5x7), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 0V, 6V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Voltage - Rated: 650 V, Gate Charge (Qg) (Max) @ Vgs: 0.75 nC @ 6 V, Input Capacitance (Ciss) (Max) @ Vds: 28 pF @ 400 V.

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TP44400SG TP44400SG Виробник : Tagore Technology TP44400SG-Rev1.2.pdf Description: GAN FET HEMT 650V .36OHM 22QFN
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerVFQFN
Mounting Type: Surface Mount
Configuration: P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 500mA, 6V
Vgs(th) (Max) @ Id: 2.5V @ 2.8mA
Supplier Device Package: 22-QFN (5x7)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V, 6V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Voltage - Rated: 650 V
Gate Charge (Qg) (Max) @ Vgs: 0.75 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 28 pF @ 400 V
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