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Технічний опис TP65H035G4WSQA Transphorm
Description: 650 V 46.5 GAN FET, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 47.2A (Tc), Rds On (Max) @ Id, Vgs: 41mOhm @ 30A, 10V, Power Dissipation (Max): 187W (Tc), Vgs(th) (Max) @ Id: 4.8V @ 1mA, Supplier Device Package: TO-247-3, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V, Qualification: AEC-Q101.
Інші пропозиції TP65H035G4WSQA за ціною від 792.81 грн до 1454.76 грн
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TP65H035G4WSQA | Виробник : Transphorm |
 Description: 650 V 46.5 GAN FETPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 47.2A (Tc) Rds On (Max) @ Id, Vgs: 41mOhm @ 30A, 10V Power Dissipation (Max): 187W (Tc) Vgs(th) (Max) @ Id: 4.8V @ 1mA Supplier Device Package: TO-247-3 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V Qualification: AEC-Q101 |
на замовлення 182 шт: термін постачання 21-31 дні (днів) |
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