TP65H070G4LSGBEA-TR Renesas Electronics Corporation
Виробник: Renesas Electronics Corporation
Description: 650V, 70MOHM GAN FET IN 8X8 PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 18A, 12V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 500µA
Supplier Device Package: 8-PQFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 588 pF @ 400 V
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 523.84 грн |
| 10+ | 341.32 грн |
| 100+ | 249.11 грн |
| 500+ | 225.80 грн |
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Технічний опис TP65H070G4LSGBEA-TR Renesas Electronics Corporation
Description: 650V, 70MOHM GAN FET IN 8X8 PQFN, Packaging: Tape & Reel (TR), Package / Case: 8-VDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C, Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 29A (Tc), Rds On (Max) @ Id, Vgs: 85mOhm @ 18A, 12V, Power Dissipation (Max): 125W (Tc), Vgs(th) (Max) @ Id: 4.8V @ 500µA, Supplier Device Package: 8-PQFN (8x8), Drive Voltage (Max Rds On, Min Rds On): 12V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 12 V, Input Capacitance (Ciss) (Max) @ Vds: 588 pF @ 400 V.
Інші пропозиції TP65H070G4LSGBEA-TR
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
TP65H070G4LSGBEA-TR | RENESAS |
Description: RENESAS - TP65H070G4LSGBEA-TR - Galliumnitrid (GaN)-Transistor, 650 V, 29 A, 0.085 ohm, 11.9 nC, PQFN, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 29A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y Gate-Ladung, typ.: 11.9nC SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: PQFN Anzahl der Pins: 8Pin(s) Produktpalette: SuperGaN Series productTraceability: Yes-Date/Lot Code usEccn: EAR99 Drain-Source-Durchgangswiderstand: 0.085ohm |
на замовлення 2400 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. |
|
|
TP65H070G4LSGBEA-TR | RENESAS |
Description: RENESAS - TP65H070G4LSGBEA-TR - Galliumnitrid (GaN)-Transistor, 650 V, 29 A, 0.085 ohm, 11.9 nC, PQFN, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 29A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: N Gate-Ladung, typ.: 11.9nC SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: PQFN Anzahl der Pins: 8Pin(s) Produktpalette: SuperGaN Series productTraceability: Yes-Date/Lot Code usEccn: EAR99 Drain-Source-Durchgangswiderstand: 0.085ohm |
на замовлення 2400 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. |
| TP65H070G4LSGBEA-TR |
|
Виробник: RENESAS
Description: RENESAS - TP65H070G4LSGBEA-TR - Galliumnitrid (GaN)-Transistor, 650 V, 29 A, 0.085 ohm, 11.9 nC, PQFN, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 29A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Gate-Ladung, typ.: 11.9nC
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: PQFN
Anzahl der Pins: 8Pin(s)
Produktpalette: SuperGaN Series
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Drain-Source-Durchgangswiderstand: 0.085ohm
Description: RENESAS - TP65H070G4LSGBEA-TR - Galliumnitrid (GaN)-Transistor, 650 V, 29 A, 0.085 ohm, 11.9 nC, PQFN, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 29A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Gate-Ladung, typ.: 11.9nC
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: PQFN
Anzahl der Pins: 8Pin(s)
Produktpalette: SuperGaN Series
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Drain-Source-Durchgangswiderstand: 0.085ohm
на замовлення 2400 шт:
термін постачання 21-31 дні (днів)
| TP65H070G4LSGBEA-TR |
|
Виробник: RENESAS
Description: RENESAS - TP65H070G4LSGBEA-TR - Galliumnitrid (GaN)-Transistor, 650 V, 29 A, 0.085 ohm, 11.9 nC, PQFN, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 29A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
Gate-Ladung, typ.: 11.9nC
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: PQFN
Anzahl der Pins: 8Pin(s)
Produktpalette: SuperGaN Series
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Drain-Source-Durchgangswiderstand: 0.085ohm
Description: RENESAS - TP65H070G4LSGBEA-TR - Galliumnitrid (GaN)-Transistor, 650 V, 29 A, 0.085 ohm, 11.9 nC, PQFN, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 29A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
Gate-Ladung, typ.: 11.9nC
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: PQFN
Anzahl der Pins: 8Pin(s)
Produktpalette: SuperGaN Series
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Drain-Source-Durchgangswiderstand: 0.085ohm
на замовлення 2400 шт:
термін постачання 21-31 дні (днів)