Технічний опис TP65H070LDG-TR Transphorm
Description: 650 V 25 A GAN FET, Mounting Type: Surface Mount, Package / Case: 3-PowerDFN, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 400 V, Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: 3-PQFN (8x8), Vgs(th) (Max) @ Id: 4.8V @ 700µA, Power Dissipation (Max): 96W (Tc), Rds On (Max) @ Id, Vgs: 85mOhm @ 16A, 10V, Current - Continuous Drain (Id) @ 25°C: 25A (Tc), FET Type: N-Channel, Technology: GaNFET (Gallium Nitride), Operating Temperature: -55°C ~ 150°C (TJ).
Інші пропозиції TP65H070LDG-TR за ціною від 555.63 грн до 1078.53 грн
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TP65H070LDG-TR | Виробник : Transphorm |
 Description: 650 V 25 A GAN FETInput Capacitance (Ciss) (Max) @ Vds: 600 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: 3-PQFN (8x8) Vgs(th) (Max) @ Id: 4.8V @ 700µA Power Dissipation (Max): 96W (Tc) Rds On (Max) @ Id, Vgs: 85mOhm @ 16A, 10V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-PowerDFN Packaging: Cut Tape (CT) |
на замовлення 662 шт: термін постачання 21-31 дні (днів) |
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TP65H070LDG-TR | Виробник : Transphorm |
Description: 650 V 25 A GAN FET Mounting Type: Surface Mount Package / Case: 3-PowerDFN Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: 3-PQFN (8x8) Vgs(th) (Max) @ Id: 4.8V @ 700µA Power Dissipation (Max): 96W (Tc) Rds On (Max) @ Id, Vgs: 85mOhm @ 16A, 10V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Operating Temperature: -55°C ~ 150°C (TJ) |
товару немає в наявності |