TP65H100G4LSGB-TR RENESAS
Виробник: RENESAS
Description: RENESAS - TP65H100G4LSGB-TR - Galliumnitrid (GaN)-Transistor, 650 V, 18.9 A, 0.11 ohm, 14.4 nC, PQFN, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 18.9A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Gate-Ladung, typ.: 14.4nC
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: PQFN
Anzahl der Pins: 8Pin(s)
Produktpalette: SuperGaN Series
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Drain-Source-Durchgangswiderstand: 0.11ohm
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Технічний опис TP65H100G4LSGB-TR RENESAS
Description: Hi Volt FETs, Packaging: Tape & Reel (TR), Package / Case: 8-VDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18.9A (Tc), Rds On (Max) @ Id, Vgs: 110mOhm @ 12A, 10V, Power Dissipation (Max): 65.8W (Tc), Vgs(th) (Max) @ Id: 4.1V @ 1.8mA, Supplier Device Package: 8-PQFN (8x8), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 14.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 818 pF @ 400 V.
Інші пропозиції TP65H100G4LSGB-TR за ціною від 152.37 грн до 389.78 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||
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TP65H100G4LSGB-TR | RENESAS |
Description: RENESAS - TP65H100G4LSGB-TR - Galliumnitrid (GaN)-Transistor, 650 V, 18.9 A, 0.11 ohm, 14.4 nC, PQFN, Oberflächenmontage tariffCode: 85412900 productTraceability: Yes-Date/Lot Code Gate-Ladung, typ.: 14.4nC SVHC: No SVHC (25-Jun-2025) rohsCompliant: YES Anzahl der Pins: 8Pin(s) euEccn: NLR isCanonical: N hazardous: false Drain-Source-Spannung Vds: 650V Drain-Source-Durchgangswiderstand: 0.11ohm rohsPhthalatesCompliant: YES usEccn: EAR99 Dauer-Drainstrom Id: 18.9A |
на замовлення 2941 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. | ||||||||
| TP65H100G4LSGB-TR | Renesas Electronics Corporation |
Description: Hi Volt FETs Packaging: Cut Tape (CT) Package / Case: 8-VDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18.9A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 12A, 10V Power Dissipation (Max): 65.8W (Tc) Vgs(th) (Max) @ Id: 4.1V @ 1.8mA Supplier Device Package: 8-PQFN (8x8) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 14.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 818 pF @ 400 V |
на замовлення 2870 шт: термін постачання 21-31 дні (днів) |
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| TP65H100G4LSGB-TR |
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Виробник: RENESAS
Description: RENESAS - TP65H100G4LSGB-TR - Galliumnitrid (GaN)-Transistor, 650 V, 18.9 A, 0.11 ohm, 14.4 nC, PQFN, Oberflächenmontage
tariffCode: 85412900
productTraceability: Yes-Date/Lot Code
Gate-Ladung, typ.: 14.4nC
SVHC: No SVHC (25-Jun-2025)
rohsCompliant: YES
Anzahl der Pins: 8Pin(s)
euEccn: NLR
isCanonical: N
hazardous: false
Drain-Source-Spannung Vds: 650V
Drain-Source-Durchgangswiderstand: 0.11ohm
rohsPhthalatesCompliant: YES
usEccn: EAR99
Dauer-Drainstrom Id: 18.9A
Description: RENESAS - TP65H100G4LSGB-TR - Galliumnitrid (GaN)-Transistor, 650 V, 18.9 A, 0.11 ohm, 14.4 nC, PQFN, Oberflächenmontage
tariffCode: 85412900
productTraceability: Yes-Date/Lot Code
Gate-Ladung, typ.: 14.4nC
SVHC: No SVHC (25-Jun-2025)
rohsCompliant: YES
Anzahl der Pins: 8Pin(s)
euEccn: NLR
isCanonical: N
hazardous: false
Drain-Source-Spannung Vds: 650V
Drain-Source-Durchgangswiderstand: 0.11ohm
rohsPhthalatesCompliant: YES
usEccn: EAR99
Dauer-Drainstrom Id: 18.9A
на замовлення 2941 шт:
термін постачання 21-31 дні (днів)
| TP65H100G4LSGB-TR |
Виробник: Renesas Electronics Corporation
Description: Hi Volt FETs
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.9A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 12A, 10V
Power Dissipation (Max): 65.8W (Tc)
Vgs(th) (Max) @ Id: 4.1V @ 1.8mA
Supplier Device Package: 8-PQFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 14.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 818 pF @ 400 V
Description: Hi Volt FETs
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.9A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 12A, 10V
Power Dissipation (Max): 65.8W (Tc)
Vgs(th) (Max) @ Id: 4.1V @ 1.8mA
Supplier Device Package: 8-PQFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 14.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 818 pF @ 400 V
на замовлення 2870 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 389.78 грн |
| 10+ | 250.35 грн |
| 100+ | 179.42 грн |
| 500+ | 152.37 грн |