TP65H150BG4JSG-TR RENESAS
Виробник: RENESAS
Description: RENESAS - TP65H150BG4JSG-TR - Galliumnitrid (GaN)-Transistor, 650 V, 16 A, 0.18 ohm, 4.9 nC, PQFN, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 16A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
usEccn: EAR99
euEccn: NLR
Gate-Ladung, typ.: 4.9nC
Bauform - Transistor: PQFN
Anzahl der Pins: 8Pin(s)
Produktpalette: SuperGaN Series
productTraceability: No
Drain-Source-Durchgangswiderstand: 0.18ohm
SVHC: No SVHC (25-Jun-2025)
| Кількість | Ціна |
|---|---|
| 3+ | 357.72 грн |
| 10+ | 237.93 грн |
| 100+ | 169.84 грн |
Відгуки про товар
Написати відгук
Технічний опис TP65H150BG4JSG-TR RENESAS
Description: GANFET N-CH 650V 13A QFN5X6, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16A (Tc), Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 6V, Power Dissipation (Max): 83W (Tc), Vgs(th) (Max) @ Id: 2.8V @ 500µA, Supplier Device Package: 8-PQFN (5x6), Drive Voltage (Max Rds On, Min Rds On): 6V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 4.9 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 400 V.
Інші пропозиції TP65H150BG4JSG-TR за ціною від 137.60 грн до 362.35 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
TP65H150BG4JSG-TR | Renesas Electronics Corporation |
Description: GANFET N-CH 650V 13A QFN5X6 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 6V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 500µA Supplier Device Package: 8-PQFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 6V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 4.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 400 V |
на замовлення 929 шт: термін постачання 21-31 дні (днів) |
|
| TP65H150BG4JSG-TR |
|
Виробник: Renesas Electronics Corporation
Description: GANFET N-CH 650V 13A QFN5X6
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 6V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 500µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 4.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 400 V
Description: GANFET N-CH 650V 13A QFN5X6
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 6V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 500µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 4.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 400 V
на замовлення 929 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 362.35 грн |
| 10+ | 231.83 грн |
| 100+ | 165.27 грн |
| 500+ | 137.60 грн |