TP65H150G4LSG-TR Renesas Electronics Corporation
Виробник: Renesas Electronics Corporation
Description: 650 V 13 A GAN FET
Packaging: Cut Tape (CT)
Package / Case: 3-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 8.5A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 500µA
Supplier Device Package: 3-PQFN (8x8)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 598 pF @ 400 V
| Кількість | Ціна |
|---|---|
| 1+ | 395.04 грн |
| 10+ | 254.21 грн |
| 100+ | 182.88 грн |
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Технічний опис TP65H150G4LSG-TR Renesas Electronics Corporation
Description: 650 V 13 A GAN FET, Input Capacitance (Ciss) (Max) @ Vds: 598 pF @ 400 V, Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: 3-PQFN (8x8), Vgs(th) (Max) @ Id: 4.8V @ 500µA, Power Dissipation (Max): 52W (Tc), Rds On (Max) @ Id, Vgs: 180mOhm @ 8.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 13A (Tc), FET Type: N-Channel, Technology: GaNFET (Gallium Nitride), Operating Temperature: -55°C ~ 150°C (TJ), Package / Case: 3-PowerTDFN, Packaging: Tape & Reel (TR), Mounting Type: Surface Mount, Part Status: Active.
Інші пропозиції TP65H150G4LSG-TR
| Фото | Назва | Виробник | Інформація |
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Ціна |
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TP65H150G4LSG-TR | Виробник : Renesas Electronics Corporation |
Description: 650 V 13 A GAN FET Input Capacitance (Ciss) (Max) @ Vds: 598 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: 3-PQFN (8x8) Vgs(th) (Max) @ Id: 4.8V @ 500µA Power Dissipation (Max): 52W (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 8.5A, 10V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Operating Temperature: -55°C ~ 150°C (TJ) Package / Case: 3-PowerTDFN Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Part Status: Active |
товару немає в наявності |
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TP65H150G4LSG-TR | Виробник : Transphorm |
MOSFET |
товару немає в наявності |