TP70H480G4JSG-TR Renesas Electronics Corporation
Виробник: Renesas Electronics Corporation
Description: 700V, 480MOHM GAN FET IN 5X6 PQF
Packaging: Cut Tape (CT)
Package / Case: 2-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 560mOhm @ 3A, 6V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: 3-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 465 pF @ 400 V
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 150.33 грн |
| 10+ | 92.38 грн |
| 100+ | 62.55 грн |
| 500+ | 46.73 грн |
| 1000+ | 42.87 грн |
| 2000+ | 41.49 грн |
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Технічний опис TP70H480G4JSG-TR Renesas Electronics Corporation
Description: 700V, 480MOHM GAN FET IN 5X6 PQF, Packaging: Tape & Reel (TR), Package / Case: 2-PowerTSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C, Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5A (Tc), Rds On (Max) @ Id, Vgs: 560mOhm @ 3A, 6V, Power Dissipation (Max): 25W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 500µA, Supplier Device Package: 3-PQFN (5x6), Drive Voltage (Max Rds On, Min Rds On): 6V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 700 V, Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 6 V, Input Capacitance (Ciss) (Max) @ Vds: 465 pF @ 400 V.
Інші пропозиції TP70H480G4JSG-TR
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
TP70H480G4JSG-TR | RENESAS |
Description: RENESAS - TP70H480G4JSG-TR - Galliumnitrid (GaN)-Transistor, 700 V, 5 A, 0.56 ohm, 5.2 nC, QFN, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 700V rohsCompliant: YES Dauer-Drainstrom Id: 5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y usEccn: EAR99 euEccn: NLR Gate-Ladung, typ.: 5.2nC Bauform - Transistor: QFN Anzahl der Pins: 3Pin(s) Produktpalette: SuperGaN Series productTraceability: Yes-Date/Lot Code Drain-Source-Durchgangswiderstand: 0.56ohm SVHC: No SVHC (25-Jun-2025) |
на замовлення 3991 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. |
| TP70H480G4JSG-TR |
|
Виробник: RENESAS
Description: RENESAS - TP70H480G4JSG-TR - Galliumnitrid (GaN)-Transistor, 700 V, 5 A, 0.56 ohm, 5.2 nC, QFN, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 700V
rohsCompliant: YES
Dauer-Drainstrom Id: 5A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
usEccn: EAR99
euEccn: NLR
Gate-Ladung, typ.: 5.2nC
Bauform - Transistor: QFN
Anzahl der Pins: 3Pin(s)
Produktpalette: SuperGaN Series
productTraceability: Yes-Date/Lot Code
Drain-Source-Durchgangswiderstand: 0.56ohm
SVHC: No SVHC (25-Jun-2025)
Description: RENESAS - TP70H480G4JSG-TR - Galliumnitrid (GaN)-Transistor, 700 V, 5 A, 0.56 ohm, 5.2 nC, QFN, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 700V
rohsCompliant: YES
Dauer-Drainstrom Id: 5A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
usEccn: EAR99
euEccn: NLR
Gate-Ladung, typ.: 5.2nC
Bauform - Transistor: QFN
Anzahl der Pins: 3Pin(s)
Produktpalette: SuperGaN Series
productTraceability: Yes-Date/Lot Code
Drain-Source-Durchgangswiderstand: 0.56ohm
SVHC: No SVHC (25-Jun-2025)
на замовлення 3991 шт:
термін постачання 21-31 дні (днів)