TP70H480G4JSG-TR Renesas Electronics Corporation
Виробник: Renesas Electronics CorporationDescription: 700V, 480MOHM GAN FET IN 5X6 PQF
Packaging: Cut Tape (CT)
Package / Case: 2-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 560mOhm @ 3A, 6V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: 3-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 465 pF @ 400 V
на замовлення 4992 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 152.52 грн |
| 10+ | 93.72 грн |
| 100+ | 63.46 грн |
| 500+ | 47.41 грн |
| 1000+ | 43.50 грн |
| 2000+ | 42.10 грн |
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Технічний опис TP70H480G4JSG-TR Renesas Electronics Corporation
Description: 700V, 480MOHM GAN FET IN 5X6 PQF, Packaging: Tape & Reel (TR), Package / Case: 2-PowerTSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C, Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5A (Tc), Rds On (Max) @ Id, Vgs: 560mOhm @ 3A, 6V, Power Dissipation (Max): 25W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 500µA, Supplier Device Package: 3-PQFN (5x6), Drive Voltage (Max Rds On, Min Rds On): 6V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 700 V, Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 6 V, Input Capacitance (Ciss) (Max) @ Vds: 465 pF @ 400 V.
Інші пропозиції TP70H480G4JSG-TR
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TP70H480G4JSG-TR | Виробник : Renesas Electronics Corporation |
Description: 700V, 480MOHM GAN FET IN 5X6 PQF Packaging: Tape & Reel (TR) Package / Case: 2-PowerTSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 560mOhm @ 3A, 6V Power Dissipation (Max): 25W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 500µA Supplier Device Package: 3-PQFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 6V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 700 V Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 465 pF @ 400 V |
товару немає в наявності |
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TP70H480G4JSG-TR | Виробник : Renesas Electronics |
GaN FETs 700V, 480mohm GaN FET in 5x6 PQFN |
товару немає в наявності |