TPAU3J S1G Taiwan Semiconductor Corporation
Виробник: Taiwan Semiconductor Corporation
Description: DIODE AVALANCHE 600V 3A TO277A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.88 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Technology: Avalanche
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
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Технічний опис TPAU3J S1G Taiwan Semiconductor Corporation
Description: DIODE AVALANCHE 600V 3A TO277A, Current - Reverse Leakage @ Vr: 10 µA @ 600 V, Voltage - Forward (Vf) (Max) @ If: 1.88 V @ 3 A, Voltage - DC Reverse (Vr) (Max): 600 V, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: TO-277A (SMPC), Current - Average Rectified (Io): 3A, Capacitance @ Vr, F: 60pF @ 4V, 1MHz, Technology: Avalanche, Reverse Recovery Time (trr): 75 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: TO-277, 3-PowerDFN, Packaging: Tape & Reel (TR).
Інші пропозиції TPAU3J S1G за ціною від 35.28 грн до 116.24 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||
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TPAU3J S1G | Taiwan Semiconductor Corporation |
Description: DIODE AVALANCHE 600V 3A TO277A Current - Reverse Leakage @ Vr: 10 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.88 V @ 3 A Voltage - DC Reverse (Vr) (Max): 600 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-277A (SMPC) Current - Average Rectified (Io): 3A Capacitance @ Vr, F: 60pF @ 4V, 1MHz Technology: Avalanche Reverse Recovery Time (trr): 75 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Packaging: Cut Tape (CT) |
на замовлення 8842 шт: термін постачання 21-31 дні (днів) |
|
| TPAU3J S1G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE AVALANCHE 600V 3A TO277A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.88 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Technology: Avalanche
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
Description: DIODE AVALANCHE 600V 3A TO277A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.88 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Technology: Avalanche
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
на замовлення 8842 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 116.24 грн |
| 10+ | 71.04 грн |
| 100+ | 47.63 грн |
| 500+ | 35.28 грн |