Технічний опис TPC8124(TE12L,V,M) Toshiba
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -40V; -12A; 1.9W; SOP8, Case: SOP8, Drain-source voltage: -40V, Drain current: -12A, On-state resistance: 6.1mΩ, Type of transistor: P-MOSFET, Power dissipation: 1.9W, Polarisation: unipolar, Kind of package: reel; tape, Gate charge: 104nC, Kind of channel: enhancement, Gate-source voltage: -25...20V, Mounting: SMD.
Інші пропозиції TPC8124(TE12L,V,M)
| Фото | Назва | Виробник | Інформація |
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Ціна |
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TPC8124(TE12L,V,M) | Виробник : TOSHIBA |
 Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -40V; -12A; 1.9W; SOP8 Case: SOP8 Drain-source voltage: -40V Drain current: -12A On-state resistance: 6.1mΩ Type of transistor: P-MOSFET Power dissipation: 1.9W Polarisation: unipolar Kind of package: reel; tape Gate charge: 104nC Kind of channel: enhancement Gate-source voltage: -25...20V Mounting: SMD |
товару немає в наявності |