TPCA8009-H(TE12L,Q Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 150V 7A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 10 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
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Технічний опис TPCA8009-H(TE12L,Q Toshiba Semiconductor and Storage
Description: MOSFET N-CH 150V 7A 8SOP, Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 10 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: 8-SOP Advance (5x5), Vgs(th) (Max) @ Id: 4V @ 1mA, Power Dissipation (Max): 1.6W (Ta), 45W (Tc), Rds On (Max) @ Id, Vgs: 350mOhm @ 3.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 7A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR), Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V, Drain to Source Voltage (Vdss): 150 V, Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount.
Інші пропозиції TPCA8009-H(TE12L,Q
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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TPCA8009-H(TE12L,Q | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 150V 7A 8SOP Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Drain to Source Voltage (Vdss): 150 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: 8-SOP Advance (5x5) Power Dissipation (Max): 1.6W (Ta), 45W (Tc) Rds On (Max) @ Id, Vgs: 350mOhm @ 3.5A, 10V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) Vgs(th) (Max) @ Id: 4V @ 1mA |
товару немає в наявності |
В кошику од. на суму грн. |
| TPCA8009-H(TE12L,Q |
|
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 150V 7A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: 8-SOP Advance (5x5)
Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Vgs(th) (Max) @ Id: 4V @ 1mA
Description: MOSFET N-CH 150V 7A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: 8-SOP Advance (5x5)
Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Vgs(th) (Max) @ Id: 4V @ 1mA
товару немає в наявності
В кошику
од. на суму грн.