TPCA8026(TE12L,Q,M Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and StorageDescription: MOSFET N-CH 30V 45A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 23A, 10V
Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 10 V
на замовлення 1171 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 126.38 грн |
| 10+ | 101.05 грн |
| 100+ | 80.45 грн |
| 500+ | 63.89 грн |
| 1000+ | 54.21 грн |
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Технічний опис TPCA8026(TE12L,Q,M Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 45A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 45A (Ta), Rds On (Max) @ Id, Vgs: 2.2mOhm @ 23A, 10V, Power Dissipation (Max): 1.6W (Ta), 45W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: 8-SOP Advance (5x5), Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 10 V.
Інші пропозиції TPCA8026(TE12L,Q,M
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
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TPCA8026(TE12L.Q.M | Виробник : Toshiba |
Trans MOSFET N-CH Si 30V 45A 8-Pin SOP Advance T/R |
товар відсутній |
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TPCA8026(TE12L,Q,M | Виробник : Toshiba |
Trans MOSFET N-CH Si 30V 45A 8-Pin SOP Advance T/R |
товар відсутній |
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TPCA8026(TE12L,Q,M | Виробник : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 30V 45A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Ta) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 23A, 10V Power Dissipation (Max): 1.6W (Ta), 45W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Advance (5x5) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 10 V |
товар відсутній |
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TPCA8026(TE12L,Q,M | Виробник : Toshiba |
MOSFET MOSFET N-CH 30V, 45A |
товар відсутній |