TPCA8064-H,LQ(CM

Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 20A 8SOP
Packaging: Tape & Reel (TR)
Vgs(th) (Max) @ Id: 2.3V @ 200µA
Power Dissipation (Max): 1.6W (Ta), 32W (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Package / Case: 8-PowerVDFN
Supplier Device Package: 8-SOP Advance (5x5)

Виробник: Toshiba
MOSFET N-Ch 30V FET 20A 32W 1600pF 23nC