TPCC8006-H(TE12LQM Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 22A 8TSON
Vgs(th) (Max) @ Id: 2.3V @ 200µA
Power Dissipation (Max): 700mW (Ta), 27W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-TSON Advance (3.3x3.3)
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Технічний опис TPCC8006-H(TE12LQM Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 22A 8TSON, Vgs(th) (Max) @ Id: 2.3V @ 200µA, Power Dissipation (Max): 700mW (Ta), 27W (Tc), Rds On (Max) @ Id, Vgs: 8mOhm @ 11A, 10V, Current - Continuous Drain (Id) @ 25°C: 22A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-VDFN Exposed Pad, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 8-TSON Advance (3.3x3.3).
Інші пропозиції TPCC8006-H(TE12LQM
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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TPCC8006-H(TE12LQM | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 30V 22A 8TSON Packaging: Cut Tape (CT) Package / Case: 8-VDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta) Rds On (Max) @ Id, Vgs: 8mOhm @ 11A, 10V Power Dissipation (Max): 700mW (Ta), 27W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 200µA Supplier Device Package: 8-TSON Advance (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. |
| TPCC8006-H(TE12LQM |
|
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 22A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 11A, 10V
Power Dissipation (Max): 700mW (Ta), 27W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 200µA
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 10 V
Description: MOSFET N-CH 30V 22A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 11A, 10V
Power Dissipation (Max): 700mW (Ta), 27W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 200µA
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 10 V
товару немає в наявності
В кошику
од. на суму грн.