TPCF8201(TE85L,F,M Toshiba Semiconductor and Storage

Description: MOSFET 2N-CH 20V 3A VS-8, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 5V, Rds On (Max) @ Id, Vgs: 49mOhm @ 1.5A, 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 10V, Current - Continuous Drain (Id) @ 25°C: 3A, Drain to Source Voltage (Vdss): 20V, Power - Max: 330mW, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-SMD, Flat Lead, Packaging: Tape & Reel (TR), Supplier Device Package: VS-8 (2.9x1.5), Vgs(th) (Max) @ Id: 1.2V @ 200µA.