TPCF8201(TE85L,F,M Toshiba Semiconductor and Storage

Description: MOSFET 2N-CH 20V 3A VS-8, Packaging: Tape & Reel (TR), Package / Case: 8-SMD, Flat Lead, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 330mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 3A, Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 10V, Rds On (Max) @ Id, Vgs: 49mOhm @ 1.5A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.2V @ 200µA, Supplier Device Package: VS-8 (2.9x1.5).