TPCF8402(TE85L,F,M Toshiba Semiconductor and Storage

Description: MOSFET N/P-CH 30V 4A/3.2A VS-8, Supplier Device Package: VS-8 (2.9x1.5), Vgs(th) (Max) @ Id: 2V @ 1mA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V, Rds On (Max) @ Id, Vgs: 50mOhm @ 2A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 10V, Current - Continuous Drain (Id) @ 25°C: 4A, 3.2A, Drain to Source Voltage (Vdss): 30V, Power - Max: 330mW, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Configuration: N and P-Channel, Mounting Type: Surface Mount, Package / Case: 8-SMD, Flat Lead, Packaging: Tape & Reel (TR).