.JPG "TPCF8B01(TE85L,F,M")
TPCF8B01(TE85L,F,M Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 2.7A VS-8
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: VS-8 (2.9x1.5)
Vgs(th) (Max) @ Id: 1.2V @ 200µA
Power Dissipation (Max): 330mW (Ta)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 110mOhm @ 1.4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Packaging: Tape & Reel (TR)
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Технічний опис TPCF8B01(TE85L,F,M Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 2.7A VS-8, Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Supplier Device Package: VS-8 (2.9x1.5), Vgs(th) (Max) @ Id: 1.2V @ 200µA, Power Dissipation (Max): 330mW (Ta), FET Feature: Schottky Diode (Isolated), Rds On (Max) @ Id, Vgs: 110mOhm @ 1.4A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SMD, Flat Lead, Packaging: Tape & Reel (TR).
Інші пропозиції TPCF8B01(TE85L,F,M
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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TPCF8B01(TE85L,F,M | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 20V 2.7A VS-8 Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Supplier Device Package: VS-8 (2.9x1.5) Vgs(th) (Max) @ Id: 1.2V @ 200µA Power Dissipation (Max): 330mW (Ta) FET Feature: Schottky Diode (Isolated) Rds On (Max) @ Id, Vgs: 110mOhm @ 1.4A, 4.5V Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. |
| TPCF8B01(TE85L,F,M |
|
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 2.7A VS-8
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: VS-8 (2.9x1.5)
Vgs(th) (Max) @ Id: 1.2V @ 200µA
Power Dissipation (Max): 330mW (Ta)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 110mOhm @ 1.4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 20V 2.7A VS-8
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: VS-8 (2.9x1.5)
Vgs(th) (Max) @ Id: 1.2V @ 200µA
Power Dissipation (Max): 330mW (Ta)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 110mOhm @ 1.4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.