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TPCF8B01(TE85L,F,M Toshiba Semiconductor and Storage

Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 2.7A VS-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 1.4A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 330mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 200µA
Supplier Device Package: VS-8 (2.9x1.5)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 10 V

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Технічний опис TPCF8B01(TE85L,F,M Toshiba Semiconductor and Storage

Description: MOSFET P-CH 20V 2.7A VS-8, Packaging: Tape & Reel (TR), Package / Case: 8-SMD, Flat Lead, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta), Rds On (Max) @ Id, Vgs: 110mOhm @ 1.4A, 4.5V, FET Feature: Schottky Diode (Isolated), Power Dissipation (Max): 330mW (Ta), Vgs(th) (Max) @ Id: 1.2V @ 200µA, Supplier Device Package: VS-8 (2.9x1.5), Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 10 V.

Інші пропозиції TPCF8B01(TE85L,F,M

Фото	Назва	Виробник	Інформація	Доступність	Ціна
	TPCF8B01(TE85L,F,M	Виробник : Toshiba Semiconductor and Storage	Description: MOSFET P-CH 20V 2.7A VS-8 Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta) Rds On (Max) @ Id, Vgs: 110mOhm @ 1.4A, 4.5V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 330mW (Ta) Vgs(th) (Max) @ Id: 1.2V @ 200µA Supplier Device Package: VS-8 (2.9x1.5) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 10 V	товару немає в наявності	В кошику од. на суму грн.