TPCP8005-H(TE85L,F Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 11A PS-8
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PS-8 (2.9x2.4)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 840mW (Ta)
Rds On (Max) @ Id, Vgs: 12.9mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Packaging: Tape & Reel (TR)
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Технічний опис TPCP8005-H(TE85L,F Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 11A PS-8, Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: PS-8 (2.9x2.4), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Power Dissipation (Max): 840mW (Ta), Rds On (Max) @ Id, Vgs: 12.9mOhm @ 5.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 11A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SMD, Flat Lead, Packaging: Tape & Reel (TR).
Інші пропозиції TPCP8005-H(TE85L,F
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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TPCP8005-H(TE85L,F | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 30V 11A PS-8 Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: PS-8 (2.9x2.4) Vgs(th) (Max) @ Id: 2.5V @ 1mA Power Dissipation (Max): 840mW (Ta) Rds On (Max) @ Id, Vgs: 12.9mOhm @ 5.5A, 10V Current - Continuous Drain (Id) @ 25°C: 11A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. |
| TPCP8005-H(TE85L,F |
|
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 11A PS-8
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PS-8 (2.9x2.4)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 840mW (Ta)
Rds On (Max) @ Id, Vgs: 12.9mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 30V 11A PS-8
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PS-8 (2.9x2.4)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 840mW (Ta)
Rds On (Max) @ Id, Vgs: 12.9mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.