Технічний опис TPH1R306PL,L1Q(M Toshiba
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 170W; SOP8A, Case: SOP8A, Mounting: SMD, Kind of channel: enhancement, Type of transistor: N-MOSFET, Kind of package: reel; tape, Polarisation: unipolar, Drain-source voltage: 60V, Drain current: 100A, Gate charge: 91nC, On-state resistance: 2.3mΩ, Power dissipation: 170W, Gate-source voltage: ±20V.
Інші пропозиції TPH1R306PL,L1Q(M
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TPH1R306PL,L1Q(M | Виробник : TOSHIBA |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 100A; 170W; SOP8A Case: SOP8A Mounting: SMD Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Polarisation: unipolar Drain-source voltage: 60V Drain current: 100A Gate charge: 91nC On-state resistance: 2.3mΩ Power dissipation: 170W Gate-source voltage: ±20V |
товару немає в наявності |