TPH2R70AR5,LQ Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: N-CH MOSFET, 100 V, 0.0027 OHM@1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 190A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 210W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5.75)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 50 V
| Кількість | Ціна |
|---|---|
| 5000+ | 48.44 грн |
| 10000+ | 44.87 грн |
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Технічний опис TPH2R70AR5,LQ Toshiba Semiconductor and Storage
Description: N-CH MOSFET, 100 V, 0.0027 OHM@1, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 190A (Tc), Rds On (Max) @ Id, Vgs: 2.7mOhm @ 50A, 10V, Power Dissipation (Max): 3W (Ta), 210W (Tc), Vgs(th) (Max) @ Id: 4.3V @ 1mA, Supplier Device Package: 8-SOP Advance (5x5.75), Drive Voltage (Max Rds On, Min Rds On): 8V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 50 V.
Інші пропозиції TPH2R70AR5,LQ за ціною від 51.54 грн до 176.43 грн
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TPH2R70AR5,LQ | Toshiba Semiconductor and Storage |
Description: N-CH MOSFET, 100 V, 0.0027 OHM@1 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 190A (Tc) Rds On (Max) @ Id, Vgs: 2.7mOhm @ 50A, 10V Power Dissipation (Max): 3W (Ta), 210W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 1mA Supplier Device Package: 8-SOP Advance (5x5.75) Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 50 V |
на замовлення 11636 шт: термін постачання 21-31 дні (днів) |
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| TPH2R70AR5,LQ |
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Виробник: Toshiba Semiconductor and Storage
Description: N-CH MOSFET, 100 V, 0.0027 OHM@1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 190A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 210W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5.75)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 50 V
Description: N-CH MOSFET, 100 V, 0.0027 OHM@1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 190A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 210W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5.75)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 50 V
на замовлення 11636 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 176.43 грн |
| 10+ | 109.25 грн |
| 100+ | 74.59 грн |
| 500+ | 56.08 грн |
| 1000+ | 51.61 грн |
| 2000+ | 51.54 грн |