Технічний опис TPH3208PS Transphorm
Description: GANFET N-CH 650V 20A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: GaNFET (Cascode Gallium Nitride FET), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Rds On (Max) @ Id, Vgs: 130mOhm @ 13A, 8V, Power Dissipation (Max): 96W (Tc), Vgs(th) (Max) @ Id: 2.6V @ 300µA, Supplier Device Package: TO-220AB, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±18V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 8 V, Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 400 V.
Інші пропозиції TPH3208PS
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
TPH3208PS | Виробник : Transphorm |
 Description: GANFET N-CH 650V 20A TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Cascode Gallium Nitride FET) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 13A, 8V Power Dissipation (Max): 96W (Tc) Vgs(th) (Max) @ Id: 2.6V @ 300µA Supplier Device Package: TO-220AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±18V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 400 V |
товару немає в наявності |