TPH3212PS Transphorm
Виробник: Transphorm
Description: GANFET N-CH 650V 27A TO220AB
Rds On (Max) @ Id, Vgs: 72mOhm @ 17A, 8V
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
FET Type: N-Channel
Technology: GaNFET (Cascode Gallium Nitride FET)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1130 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 8 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±18V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2.6V @ 400uA
Power Dissipation (Max): 104W (Tc)
Відгуки про товар
Написати відгук
Технічний опис TPH3212PS Transphorm
Description: GANFET N-CH 650V 27A TO220AB, Rds On (Max) @ Id, Vgs: 72mOhm @ 17A, 8V, Current - Continuous Drain (Id) @ 25°C: 27A (Tc), FET Type: N-Channel, Technology: GaNFET (Cascode Gallium Nitride FET), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 1130 pF @ 400 V, Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 8 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±18V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: TO-220AB, Vgs(th) (Max) @ Id: 2.6V @ 400uA, Power Dissipation (Max): 104W (Tc).
Інші пропозиції TPH3212PS
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
TPH3212PS | Виробник : Renesas Electronics |
GaN FETs 650V, 72mOhm |
товару немає в наявності |