Технічний опис TPIC44H01DAR
Category: MOSFET/IGBT drivers, Description: IC: driver; MOSFET half-bridge; gate driver; TSSOP32; 12÷42V, Type of integrated circuit: driver, Topology: MOSFET half-bridge, Kind of integrated circuit: gate driver, Case: TSSOP32, Output voltage: 12...42V, Integrated circuit features: charge pump; low standby current; SPI slave; UVLO (UnderVoltage LockOut), Mounting: SMD, Operating temperature: -40...125°C, Impulse rise time: 12ns, Pulse fall time: 12ns, Kind of package: reel; tape, Protection: anti-overvoltage OVP; output short circuit.
Інші пропозиції TPIC44H01DAR
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
---|---|---|---|---|---|
![]() |
TPIC44H01DAR | Виробник : Texas Instruments |
![]() |
товару немає в наявності |
|
![]() |
TPIC44H01DAR | Виробник : Texas Instruments |
![]() |
товару немає в наявності |
|
![]() |
TPIC44H01DAR | Виробник : Texas Instruments |
![]() |
товару немає в наявності |
|
TPIC44H01DAR | Виробник : TEXAS INSTRUMENTS |
![]() Description: IC: driver; MOSFET half-bridge; gate driver; TSSOP32; 12÷42V Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver Case: TSSOP32 Output voltage: 12...42V Integrated circuit features: charge pump; low standby current; SPI slave; UVLO (UnderVoltage LockOut) Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 12ns Pulse fall time: 12ns Kind of package: reel; tape Protection: anti-overvoltage OVP; output short circuit |
товару немає в наявності |