Технічний опис TPIC44H01DAR
Category: MOSFET/IGBT drivers, Description: IC: driver; MOSFET half-bridge; gate driver; TSSOP32; 12÷42V, Output voltage: 12...42V, Type of integrated circuit: driver, Impulse rise time: 12ns, Pulse fall time: 12ns, Integrated circuit features: charge pump; low standby current; SPI slave; UVLO (UnderVoltage LockOut), Kind of package: reel; tape, Case: TSSOP32, Protection: anti-overvoltage OVP; output short circuit, Operating temperature: -40...125°C, Kind of integrated circuit: gate driver, Topology: MOSFET half-bridge, Mounting: SMD.
Інші пропозиції TPIC44H01DAR
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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TPIC44H01DAR | Виробник : Texas Instruments |
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товару немає в наявності |
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TPIC44H01DAR | Виробник : Texas Instruments |
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товару немає в наявності |
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TPIC44H01DAR | Виробник : Texas Instruments |
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товару немає в наявності |
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TPIC44H01DAR | Виробник : TEXAS INSTRUMENTS |
![]() Description: IC: driver; MOSFET half-bridge; gate driver; TSSOP32; 12÷42V Output voltage: 12...42V Type of integrated circuit: driver Impulse rise time: 12ns Pulse fall time: 12ns Integrated circuit features: charge pump; low standby current; SPI slave; UVLO (UnderVoltage LockOut) Kind of package: reel; tape Case: TSSOP32 Protection: anti-overvoltage OVP; output short circuit Operating temperature: -40...125°C Kind of integrated circuit: gate driver Topology: MOSFET half-bridge Mounting: SMD |
товару немає в наявності |