TPS1101PWR Texas Instruments
Виробник: Texas Instruments
Description: MOSFET P-CH 15V 2.18A 16TSSOP
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 11.25 nC @ 10 V
Drain to Source Voltage (Vdss): 15 V
Vgs (Max): +2V, -15V
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 10V
Part Status: Active
Supplier Device Package: 16-TSSOP
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 710mW (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.18A (Ta)
FET Type: P-Channel
| Кількість | Ціна |
|---|---|
| 2000+ | 68.57 грн |
| 6000+ | 63.55 грн |
| 10000+ | 61.07 грн |
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Технічний опис TPS1101PWR Texas Instruments
Description: MOSFET P-CH 15V 2.18A 16TSSOP, Technology: MOSFET (Metal Oxide), Operating Temperature: -40°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 16-TSSOP (0.173", 4.40mm Width), Packaging: Tape & Reel (TR), Gate Charge (Qg) (Max) @ Vgs: 11.25 nC @ 10 V, Drain to Source Voltage (Vdss): 15 V, Vgs (Max): +2V, -15V, Drive Voltage (Max Rds On, Min Rds On): 2.7V, 10V, Part Status: Active, Supplier Device Package: 16-TSSOP, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Power Dissipation (Max): 710mW (Ta), Rds On (Max) @ Id, Vgs: 90mOhm @ 2.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 2.18A (Ta), FET Type: P-Channel.
Інші пропозиції TPS1101PWR за ціною від 73.66 грн до 73.66 грн
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TPS1101PWR | Texas Instruments |
Description: MOSFET P-CH 15V 2.18A 16TSSOP Packaging: Bulk Package / Case: 16-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.18A (Ta) Rds On (Max) @ Id, Vgs: 90mOhm @ 2.5A, 10V Power Dissipation (Max): 710mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 16-TSSOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.7V, 10V Vgs (Max): +2V, -15V Drain to Source Voltage (Vdss): 15 V Gate Charge (Qg) (Max) @ Vgs: 11.25 nC @ 10 V |
на замовлення 13000 шт: термін постачання 21-31 дні (днів) |
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TPS1101PWR | Texas Instruments |
Description: MOSFET P-CH 15V 2.18A 16TSSOP Gate Charge (Qg) (Max) @ Vgs: 11.25 nC @ 10 V Drain to Source Voltage (Vdss): 15 V Vgs (Max): +2V, -15V Drive Voltage (Max Rds On, Min Rds On): 2.7V, 10V Part Status: Active Supplier Device Package: 16-TSSOP Vgs(th) (Max) @ Id: 1.5V @ 250µA Power Dissipation (Max): 710mW (Ta) Rds On (Max) @ Id, Vgs: 90mOhm @ 2.5A, 10V Current - Continuous Drain (Id) @ 25°C: 2.18A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 16-TSSOP (0.173", 4.40mm Width) Packaging: Cut Tape (CT) |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||
| TPS1101PWR |
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на замовлення 1000 шт: термін постачання 14-28 дні (днів) |
В кошику од. на суму грн. |
| TPS1101PWR |
|
Виробник: Texas Instruments
Description: MOSFET P-CH 15V 2.18A 16TSSOP
Packaging: Bulk
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.18A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.5A, 10V
Power Dissipation (Max): 710mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 16-TSSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 10V
Vgs (Max): +2V, -15V
Drain to Source Voltage (Vdss): 15 V
Gate Charge (Qg) (Max) @ Vgs: 11.25 nC @ 10 V
Description: MOSFET P-CH 15V 2.18A 16TSSOP
Packaging: Bulk
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.18A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.5A, 10V
Power Dissipation (Max): 710mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 16-TSSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 10V
Vgs (Max): +2V, -15V
Drain to Source Voltage (Vdss): 15 V
Gate Charge (Qg) (Max) @ Vgs: 11.25 nC @ 10 V
на замовлення 13000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 300+ | 73.66 грн |
| TPS1101PWR |
|
Виробник: Texas Instruments
Description: MOSFET P-CH 15V 2.18A 16TSSOP
Gate Charge (Qg) (Max) @ Vgs: 11.25 nC @ 10 V
Drain to Source Voltage (Vdss): 15 V
Vgs (Max): +2V, -15V
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 10V
Part Status: Active
Supplier Device Package: 16-TSSOP
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 710mW (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.18A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 15V 2.18A 16TSSOP
Gate Charge (Qg) (Max) @ Vgs: 11.25 nC @ 10 V
Drain to Source Voltage (Vdss): 15 V
Vgs (Max): +2V, -15V
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 10V
Part Status: Active
Supplier Device Package: 16-TSSOP
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 710mW (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.18A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)