TPS28225D Texas Instruments
Виробник: Texas InstrumentsDescription: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 4.5V ~ 8.8V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 33 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 10ns, 10ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.1V
Current - Peak Output (Source, Sink): 2A, 2A
DigiKey Programmable: Not Verified
на замовлення 536 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 278+ | 80.52 грн |
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Технічний опис TPS28225D Texas Instruments
Category: MOSFET/IGBT drivers, Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8, Type of integrated circuit: driver, Topology: MOSFET half-bridge, Kind of integrated circuit: gate driver; high-/low-side, Case: SO8, Output current: 6A, Number of channels: 2, Supply voltage: 4.5...8V DC, Integrated circuit features: dead time; integrated bootstrap functionality; UVLO (UnderVoltage LockOut), Mounting: SMD, Operating temperature: -40...125°C, Impulse rise time: 10ns, Pulse fall time: 5ns, Kind of package: tube, Kind of output: inverting; non-inverting, Protection: undervoltage UVP, кількість в упаковці: 1 шт.
Інші пропозиції TPS28225D за ціною від 72.05 грн до 184.41 грн
| Фото | Назва | Виробник | Інформація |
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TPS28225D | Виробник : TEXAS INSTRUMENTS |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: 6A Number of channels: 2 Supply voltage: 4.5...8V DC Integrated circuit features: dead time; integrated bootstrap functionality; UVLO (UnderVoltage LockOut) Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 10ns Pulse fall time: 5ns Kind of package: tube Kind of output: inverting; non-inverting Protection: undervoltage UVP |
на замовлення 51 шт: термін постачання 21-30 дні (днів) |
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TPS28225D | Виробник : Texas Instruments |
Driver 6A 2-OUT High Side/Low Side Half Brdg Inv/Non-Inv 8-Pin SOIC Tube |
на замовлення 436 шт: термін постачання 21-31 дні (днів) |
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TPS28225D | Виробник : Texas Instruments |
Description: IC GATE DRVR HALF-BRIDGE 8SOIC Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 4.5V ~ 8.8V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 33 V Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 10ns, 10ns Channel Type: Synchronous Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: N-Channel MOSFET Logic Voltage - VIL, VIH: 0.8V, 2.1V Current - Peak Output (Source, Sink): 2A, 2A Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 728 шт: термін постачання 21-31 дні (днів) |
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TPS28225D | Виробник : TEXAS INSTRUMENTS |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: 6A Number of channels: 2 Supply voltage: 4.5...8V DC Integrated circuit features: dead time; integrated bootstrap functionality; UVLO (UnderVoltage LockOut) Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 10ns Pulse fall time: 5ns Kind of package: tube Kind of output: inverting; non-inverting Protection: undervoltage UVP кількість в упаковці: 1 шт |
на замовлення 51 шт: термін постачання 14-21 дні (днів) |
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TPS28225D | Виробник : Texas Instruments |
Gate Drivers 8-Pin Hi Freq 4-Amp Sink Synch |
на замовлення 362 шт: термін постачання 21-30 дні (днів) |
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TPS28225D | Виробник : Texas Instruments |
Driver 6A 2-OUT High and Low Side Half Brdg Inv/Non-Inv 8-Pin SOIC Tube |
товару немає в наявності |