TPS28226DR Texas Instruments
Виробник: Texas InstrumentsDescription: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 6.8V ~ 8.8V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 33 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 10ns, 10ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel MOSFET
DigiKey Programmable: Not Verified
на замовлення 4167 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 431+ | 46.33 грн |
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Технічний опис TPS28226DR Texas Instruments
Category: MOSFET/IGBT drivers, Description: IC: driver; MOSFET half-bridge; MOSFET gate driver; SO8; 2A, Mounting: SMD, Case: SO8, Kind of package: reel; tape, Operating temperature: -40...125°C, Integrated circuit features: dead time; integrated bootstrap functionality; UVLO (UnderVoltage LockOut), Protection: undervoltage UVP, Kind of integrated circuit: MOSFET gate driver, Topology: MOSFET half-bridge, Output current: 2A, Type of integrated circuit: driver, Impulse rise time: 10ns, Pulse fall time: 10ns, кількість в упаковці: 1 шт.
Інші пропозиції TPS28226DR за ціною від 39.89 грн до 115.95 грн
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TPS28226DR | Виробник : Texas Instruments |
Gate Drivers Hi Fre 4A Sink Synch MOSFET Driver |
на замовлення 2417 шт: термін постачання 21-30 дні (днів) |
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TPS28226DR | Виробник : Texas Instruments |
Driver 6A 2-OUT High and Low Side Half Brdg Inv/Non-Inv 8-Pin SOIC T/R |
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| TPS28226DR | Виробник : TEXAS INSTRUMENTS |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; MOSFET gate driver; SO8; 2A Mounting: SMD Case: SO8 Kind of package: reel; tape Operating temperature: -40...125°C Integrated circuit features: dead time; integrated bootstrap functionality; UVLO (UnderVoltage LockOut) Protection: undervoltage UVP Kind of integrated circuit: MOSFET gate driver Topology: MOSFET half-bridge Output current: 2A Type of integrated circuit: driver Impulse rise time: 10ns Pulse fall time: 10ns кількість в упаковці: 1 шт |
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TPS28226DR | Виробник : Texas Instruments |
Description: IC GATE DRVR HALF-BRIDGE 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 6.8V ~ 8.8V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 33 V Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 10ns, 10ns Channel Type: Synchronous Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: N-Channel MOSFET DigiKey Programmable: Not Verified |
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TPS28226DR | Виробник : Texas Instruments |
Description: IC GATE DRVR HALF-BRIDGE 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 6.8V ~ 8.8V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 33 V Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 10ns, 10ns Channel Type: Synchronous Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: N-Channel MOSFET DigiKey Programmable: Not Verified |
товар відсутній |
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| TPS28226DR | Виробник : TEXAS INSTRUMENTS |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; MOSFET gate driver; SO8; 2A Mounting: SMD Case: SO8 Kind of package: reel; tape Operating temperature: -40...125°C Integrated circuit features: dead time; integrated bootstrap functionality; UVLO (UnderVoltage LockOut) Protection: undervoltage UVP Kind of integrated circuit: MOSFET gate driver Topology: MOSFET half-bridge Output current: 2A Type of integrated circuit: driver Impulse rise time: 10ns Pulse fall time: 10ns |
товар відсутній |