Технічний опис TPS28226DRBR BB/TI
Category: MOSFET/IGBT drivers, Description: IC: driver; MOSFET half-bridge; MOSFET gate driver; SON8; 2A, Mounting: SMD, Case: SON8, Kind of package: reel; tape, Operating temperature: -40...125°C, Integrated circuit features: dead time; integrated bootstrap functionality; UVLO (UnderVoltage LockOut), Pulse fall time: 10ns, Impulse rise time: 10ns, Type of integrated circuit: driver, Output current: 2A, Protection: undervoltage UVP, Kind of integrated circuit: MOSFET gate driver, Topology: MOSFET half-bridge, кількість в упаковці: 1 шт.
Інші пропозиції TPS28226DRBR
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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| TPS28226DRBR | Виробник : TI |
 06+ |
на замовлення 2400 шт: термін постачання 14-28 дні (днів) |
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| TPS28226DRBR | Виробник : TI |
0814+ DFN-8 |
на замовлення 2700 шт: термін постачання 14-28 дні (днів) |
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TPS28226DRBR | Виробник : Texas Instruments |
Driver 6A 2-OUT High and Low Side Half Brdg Inv/Non-Inv 8-Pin VSON EP T/R |
товар відсутній |
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TPS28226DRBR | Виробник : Texas Instruments |
Driver 6A 2-OUT High and Low Side Half Brdg Inv/Non-Inv 8-Pin VSON EP T/R |
товар відсутній |
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TPS28226DRBR | Виробник : Texas Instruments |
Driver 6A 2-OUT High and Low Side Half Brdg Inv/Non-Inv 8-Pin VSON EP T/R |
товар відсутній |
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| TPS28226DRBR | Виробник : TEXAS INSTRUMENTS |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; MOSFET gate driver; SON8; 2A Mounting: SMD Case: SON8 Kind of package: reel; tape Operating temperature: -40...125°C Integrated circuit features: dead time; integrated bootstrap functionality; UVLO (UnderVoltage LockOut) Pulse fall time: 10ns Impulse rise time: 10ns Type of integrated circuit: driver Output current: 2A Protection: undervoltage UVP Kind of integrated circuit: MOSFET gate driver Topology: MOSFET half-bridge кількість в упаковці: 1 шт |
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TPS28226DRBR | Виробник : Texas Instruments |
Description: IC GATE DRVR HALF-BRIDGE 8SON Packaging: Tape & Reel (TR) Package / Case: 8-VDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 6.8V ~ 8.8V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 33 V Supplier Device Package: 8-SON (3x3) Rise / Fall Time (Typ): 10ns, 10ns Channel Type: Synchronous Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: N-Channel MOSFET DigiKey Programmable: Not Verified |
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TPS28226DRBR | Виробник : Texas Instruments |
Description: IC GATE DRVR HALF-BRIDGE 8SON Packaging: Cut Tape (CT) Package / Case: 8-VDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 6.8V ~ 8.8V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 33 V Supplier Device Package: 8-SON (3x3) Rise / Fall Time (Typ): 10ns, 10ns Channel Type: Synchronous Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: N-Channel MOSFET DigiKey Programmable: Not Verified |
товар відсутній |
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TPS28226DRBR | Виробник : Texas Instruments |
Gate Drivers Hi Fre 4A Sink Synch MOSFET Driver |
товар відсутній |
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| TPS28226DRBR | Виробник : TEXAS INSTRUMENTS |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; MOSFET gate driver; SON8; 2A Mounting: SMD Case: SON8 Kind of package: reel; tape Operating temperature: -40...125°C Integrated circuit features: dead time; integrated bootstrap functionality; UVLO (UnderVoltage LockOut) Pulse fall time: 10ns Impulse rise time: 10ns Type of integrated circuit: driver Output current: 2A Protection: undervoltage UVP Kind of integrated circuit: MOSFET gate driver Topology: MOSFET half-bridge |
товар відсутній |