TPS28226DRBT Texas Instruments
Виробник: Texas InstrumentsDescription: IC GATE DRVR HALF-BRIDGE 8SON
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 6.8V ~ 8.8V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 33 V
Supplier Device Package: 8-SON (3x3)
Rise / Fall Time (Typ): 10ns, 10ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 225 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 212.62 грн |
| 10+ | 132.37 грн |
| 25+ | 113.58 грн |
| 100+ | 86.69 грн |
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Технічний опис TPS28226DRBT Texas Instruments
Description: IC GATE DRVR HALF-BRIDGE 8SON, Packaging: Tape & Reel (TR), Package / Case: 8-VDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 125°C (TJ), Voltage - Supply: 6.8V ~ 8.8V, Input Type: Non-Inverting, High Side Voltage - Max (Bootstrap): 33 V, Supplier Device Package: 8-SON (3x3), Rise / Fall Time (Typ): 10ns, 10ns, Channel Type: Synchronous, Driven Configuration: Half-Bridge, Number of Drivers: 2, Gate Type: N-Channel MOSFET, Part Status: Active, DigiKey Programmable: Not Verified.
Інші пропозиції TPS28226DRBT
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TPS28226DRBT | Виробник : Texas Instruments |
Description: IC GATE DRVR HALF-BRIDGE 8SON Packaging: Tape & Reel (TR) Package / Case: 8-VDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 6.8V ~ 8.8V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 33 V Supplier Device Package: 8-SON (3x3) Rise / Fall Time (Typ): 10ns, 10ns Channel Type: Synchronous Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: N-Channel MOSFET Part Status: Active DigiKey Programmable: Not Verified |
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