TQM019NH04CR RLG Taiwan Semiconductor Corporation
Виробник: Taiwan Semiconductor CorporationDescription: 40V, 100A, SINGLE N-CHANNEL POWE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: 8-PDFNU (4.9x5.75)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9044 pF @ 25 V
Qualification: AEC-Q101
на замовлення 4980 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 234.27 грн |
| 10+ | 154.93 грн |
| 100+ | 112.52 грн |
| 500+ | 88.07 грн |
| 1000+ | 84.23 грн |
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Технічний опис TQM019NH04CR RLG Taiwan Semiconductor Corporation
Description: 40V, 100A, SINGLE N-CHANNEL POWE, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 100A (Tc), Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V, Power Dissipation (Max): 150W (Tc), Vgs(th) (Max) @ Id: 3.6V @ 250µA, Supplier Device Package: 8-PDFNU (4.9x5.75), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 7V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 9044 pF @ 25 V, Qualification: AEC-Q101.
Інші пропозиції TQM019NH04CR RLG за ціною від 91.31 грн до 272.92 грн
| Фото | Назва | Виробник | Інформація |
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TQM019NH04CR RLG | Виробник : Taiwan Semiconductor |
MOSFETs 40V, 100A, Single N-Channel Power MOSFET |
на замовлення 4994 шт: термін постачання 21-30 дні (днів) |
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| TQM019NH04CR RLG | Виробник : Taiwan Semiconductor |
Trans MOSFET N-CH 40V 100A 8-Pin PDFN EP Automotive AEC-Q101 |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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TQM019NH04CR RLG | Виробник : Taiwan Semiconductor Corporation |
Description: 40V, 100A, SINGLE N-CHANNEL POWE Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 250µA Supplier Device Package: 8-PDFNU (4.9x5.75) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9044 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
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| TQM019NH04CR RLG | Виробник : TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 150W; PDFN56U Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Power dissipation: 150W Case: PDFN56U Gate-source voltage: ±20V On-state resistance: 1.9mΩ Mounting: SMD Gate charge: 89nC Kind of package: tape Kind of channel: enhancement |
товару немає в наявності |