TQM100NB04CV RGG Taiwan Semiconductor Corporation
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 23.5A, 10V
Power Dissipation (Max): 2.4W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: 8-PDFN (3.15x3.1)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1319 pF @ 20 V
Qualification: AEC-Q101
| Кількість | Ціна |
|---|---|
| 5000+ | 19.03 грн |
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Технічний опис TQM100NB04CV RGG Taiwan Semiconductor Corporation
Description: MOSFET, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 47A (Tc), Rds On (Max) @ Id, Vgs: 10mOhm @ 23.5A, 10V, Power Dissipation (Max): 2.4W (Ta), 43W (Tc), Vgs(th) (Max) @ Id: 3.8V @ 250µA, Supplier Device Package: 8-PDFN (3.15x3.1), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 7V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1319 pF @ 20 V, Qualification: AEC-Q101.
Інші пропозиції TQM100NB04CV RGG за ціною від 19.15 грн до 79.91 грн
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TQM100NB04CV RGG | Taiwan Semiconductor Corporation |
Description: MOSFET Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 23.5A, 10V Power Dissipation (Max): 2.4W (Ta), 43W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 250µA Supplier Device Package: 8-PDFN (3.15x3.1) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1319 pF @ 20 V Qualification: AEC-Q101 |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
|
| TQM100NB04CV RGG |
|
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 23.5A, 10V
Power Dissipation (Max): 2.4W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: 8-PDFN (3.15x3.1)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1319 pF @ 20 V
Qualification: AEC-Q101
Description: MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 23.5A, 10V
Power Dissipation (Max): 2.4W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: 8-PDFN (3.15x3.1)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1319 pF @ 20 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 79.91 грн |
| 10+ | 48.30 грн |
| 100+ | 31.75 грн |
| 500+ | 23.12 грн |
| 1000+ | 20.97 грн |
| 2000+ | 19.15 грн |