TQM138KDCU6 RFG Taiwan Semiconductor Corporation
Виробник: Taiwan Semiconductor CorporationDescription: MOSFET 2N-CH 60V 0.32A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 320mW (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 320mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 28pF @ 30V
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 320mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-363
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1390 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 14+ | 23.72 грн |
| 23+ | 14.26 грн |
| 100+ | 7.95 грн |
| 500+ | 6.18 грн |
| 1000+ | 5.52 грн |
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Технічний опис TQM138KDCU6 RFG Taiwan Semiconductor Corporation
Description: MOSFET 2N-CH 60V 0.32A SOT363, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 320mW (Ta), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 320mA (Ta), Input Capacitance (Ciss) (Max) @ Vds: 28pF @ 30V, Rds On (Max) @ Id, Vgs: 1.6Ohm @ 320mA, 10V, Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 10V, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: SOT-363, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції TQM138KDCU6 RFG
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TQM138KDCU6 RFG | Виробник : Taiwan Semiconductor Corporation |
Description: MOSFET 2N-CH 60V 0.32A SOT363 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 320mW (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 320mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 28pF @ 30V Rds On (Max) @ Id, Vgs: 1.6Ohm @ 320mA, 10V Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-363 Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
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| TQM138KDCU6 RFG | Виробник : TAIWAN SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 320mA; 320mW; SOT363 Kind of channel: enhancement Type of transistor: N-MOSFET x2 Mounting: SMD Case: SOT363 Kind of package: tape Polarisation: unipolar Gate charge: 1.8nC Drain current: 0.32A Power dissipation: 0.32W On-state resistance: 1.6Ω Gate-source voltage: ±20V Drain-source voltage: 60V |
товару немає в наявності |