TQM2N7002KCX RFG Taiwan Semiconductor Corporation
Виробник: Taiwan Semiconductor Corporation
Description: 60V, 0.37A, SINGLE N-CHANNEL SMA
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 370mA (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 370mA, 10V
Power Dissipation (Max): 416mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 27.5 pF @ 30 V
Qualification: AEC-Q101
| Кількість | Ціна |
|---|---|
| 3000+ | 4.01 грн |
Відгуки про товар
Написати відгук
Технічний опис TQM2N7002KCX RFG Taiwan Semiconductor Corporation
Description: 60V, 0.37A, SINGLE N-CHANNEL SMA, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 370mA (Ta), Rds On (Max) @ Id, Vgs: 1.6Ohm @ 370mA, 10V, Power Dissipation (Max): 416mW (Ta), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: SOT-23, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 27.5 pF @ 30 V, Qualification: AEC-Q101.
Інші пропозиції TQM2N7002KCX RFG за ціною від 3.23 грн до 20.43 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
TQM2N7002KCX RFG | Taiwan Semiconductor Corporation |
Description: 60V, 0.37A, SINGLE N-CHANNEL SMA Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 370mA (Ta) Rds On (Max) @ Id, Vgs: 1.6Ohm @ 370mA, 10V Power Dissipation (Max): 416mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 27.5 pF @ 30 V Qualification: AEC-Q101 |
на замовлення 5824 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
 |
TQM2N7002KCX RFG | Taiwan Semiconductor |
MOSFETs 60V, 0.37A, Single N-Channel Small-signal MOSFETs |
на замовлення 7419 шт: термін постачання 21-30 дні (днів) |
|
| TQM2N7002KCX RFG |
|
Виробник: Taiwan Semiconductor Corporation
Description: 60V, 0.37A, SINGLE N-CHANNEL SMA
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 370mA (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 370mA, 10V
Power Dissipation (Max): 416mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 27.5 pF @ 30 V
Qualification: AEC-Q101
Description: 60V, 0.37A, SINGLE N-CHANNEL SMA
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 370mA (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 370mA, 10V
Power Dissipation (Max): 416mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 27.5 pF @ 30 V
Qualification: AEC-Q101
на замовлення 5824 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 19.78 грн |
| 27+ | 11.50 грн |
| 100+ | 7.15 грн |
| 500+ | 4.93 грн |
| 1000+ | 4.36 грн |
| TQM2N7002KCX RFG |
|
Виробник: Taiwan Semiconductor
MOSFETs 60V, 0.37A, Single N-Channel Small-signal MOSFETs
MOSFETs 60V, 0.37A, Single N-Channel Small-signal MOSFETs
на замовлення 7419 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 20.43 грн |
| 27+ | 12.21 грн |
| 100+ | 6.68 грн |
| 500+ | 4.92 грн |
| 1000+ | 4.36 грн |
| 3000+ | 3.59 грн |
| 6000+ | 3.23 грн |