TQM2N7002KDCU6 RFG Taiwan Semiconductor
| Кількість | Ціна |
|---|---|
| 14+ | 23.96 грн |
| 23+ | 14.64 грн |
| 100+ | 8.02 грн |
| 500+ | 5.91 грн |
| 1000+ | 5.56 грн |
| 3000+ | 4.36 грн |
| 6000+ | 3.87 грн |
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Технічний опис TQM2N7002KDCU6 RFG Taiwan Semiconductor
Description: MOSFET 2N-CH 60V 0.33A SOT363, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 337mW (Ta), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 330mA (Ta), Input Capacitance (Ciss) (Max) @ Vds: 27.5pF @ 30V, Rds On (Max) @ Id, Vgs: 1.6Ohm @ 330mA, 10V, Gate Charge (Qg) (Max) @ Vgs: 1.7nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: SOT-363, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції TQM2N7002KDCU6 RFG за ціною від 9.17 грн до 24.53 грн
| Фото | Назва | Виробник | Інформація |
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TQM2N7002KDCU6 RFG | Taiwan Semiconductor Corporation |
 Description: MOSFET 2N-CH 60V 0.33A SOT363Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 337mW (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 330mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 27.5pF @ 30V Rds On (Max) @ Id, Vgs: 1.6Ohm @ 330mA, 10V Gate Charge (Qg) (Max) @ Vgs: 1.7nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-363 Grade: Automotive Qualification: AEC-Q101 |
на замовлення 436 шт: термін постачання 21-31 дні (днів) |
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| TQM2N7002KDCU6 RFG |
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Виробник: Taiwan Semiconductor Corporation
Description: MOSFET 2N-CH 60V 0.33A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 337mW (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 330mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 27.5pF @ 30V
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 330mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.7nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-363
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 60V 0.33A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 337mW (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 330mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 27.5pF @ 30V
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 330mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.7nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-363
Grade: Automotive
Qualification: AEC-Q101
на замовлення 436 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 24.53 грн |
| 21+ | 14.63 грн |
| 100+ | 9.17 грн |