TQM2N7002KDCU6 RFG Taiwan Semiconductor Corporation
Виробник: Taiwan Semiconductor CorporationDescription: MOSFET 2N-CH 60V 0.33A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 330mA (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-363
Grade: Automotive
Qualification: AEC-Q101
Power - Max: 337mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 27.5pF @ 30V
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 330mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.7nC @ 10V
на замовлення 2846 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 14+ | 23.79 грн |
| 23+ | 14.22 грн |
| 100+ | 7.91 грн |
| 500+ | 6.15 грн |
| 1000+ | 5.49 грн |
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Технічний опис TQM2N7002KDCU6 RFG Taiwan Semiconductor Corporation
Description: MOSFET 2N-CH 60V 0.33A SOT363, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 337mW (Ta), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 330mA (Ta), Input Capacitance (Ciss) (Max) @ Vds: 27.5pF @ 30V, Rds On (Max) @ Id, Vgs: 1.6Ohm @ 330mA, 10V, Gate Charge (Qg) (Max) @ Vgs: 1.7nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: SOT-363, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції TQM2N7002KDCU6 RFG за ціною від 3.11 грн до 25.83 грн
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TQM2N7002KDCU6 RFG | Виробник : Taiwan Semiconductor |
MOSFETs 60V, 0.33A, Dual N-Channel Small-signal MOSFETs |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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TQM2N7002KDCU6 RFG | Виробник : Taiwan Semiconductor Corporation |
Description: MOSFET 2N-CH 60V 0.33A SOT363 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 337mW (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 330mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 27.5pF @ 30V Rds On (Max) @ Id, Vgs: 1.6Ohm @ 330mA, 10V Gate Charge (Qg) (Max) @ Vgs: 1.7nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-363 Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
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| TQM2N7002KDCU6 RFG | Виробник : TAIWAN SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 330mA; 337mW; SOT363 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.33A Power dissipation: 337mW Case: SOT363 Gate-source voltage: ±20V On-state resistance: 1.6Ω Mounting: SMD Gate charge: 1.7nC Kind of package: tape Kind of channel: enhancement |
товару немає в наявності |