Технічний опис TQM300NB06DCR RLG Taiwan Semiconductor
Description: MOSFET 2N-CH 60V 6A 8PDFNU, Qualification: AEC-Q101, Grade: Automotive, Supplier Device Package: 8-PDFNU (5x6), Vgs(th) (Max) @ Id: 3.8V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 30V, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 25A (Tc), Drain to Source Voltage (Vdss): 60V, Power - Max: 2.5W (Ta), 48W (Tc), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Wettable Flank, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).
Інші пропозиції TQM300NB06DCR RLG
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
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TQM300NB06DCR RLG | Taiwan Semiconductor Corporation |
 Description: MOSFET 2N-CH 60V 6A 8PDFNUQualification: AEC-Q101 Grade: Automotive Supplier Device Package: 8-PDFNU (5x6) Vgs(th) (Max) @ Id: 3.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 30V Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 25A (Tc) Drain to Source Voltage (Vdss): 60V Power - Max: 2.5W (Ta), 48W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount, Wettable Flank Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. |
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TQM300NB06DCR RLG | Taiwan Semiconductor Corporation |
Description: MOSFET 2N-CH 60V 6A 8PDFNU Qualification: AEC-Q101 Grade: Automotive Supplier Device Package: 8-PDFNU (5x6) Vgs(th) (Max) @ Id: 3.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 30V Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 25A (Tc) Drain to Source Voltage (Vdss): 60V Power - Max: 2.5W (Ta), 48W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount, Wettable Flank Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. |
| TQM300NB06DCR RLG | TAIWAN SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 25A; 48W; PDFN56U Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 25A Power dissipation: 48W Case: PDFN56U Gate-source voltage: ±20V On-state resistance: 30mΩ Mounting: SMD Gate charge: 20nC Kind of package: tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. |
| TQM300NB06DCR RLG |
|
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET 2N-CH 60V 6A 8PDFNU
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: 8-PDFNU (5x6)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 25A (Tc)
Drain to Source Voltage (Vdss): 60V
Power - Max: 2.5W (Ta), 48W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Description: MOSFET 2N-CH 60V 6A 8PDFNU
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: 8-PDFNU (5x6)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 25A (Tc)
Drain to Source Voltage (Vdss): 60V
Power - Max: 2.5W (Ta), 48W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| TQM300NB06DCR RLG |
|
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET 2N-CH 60V 6A 8PDFNU
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: 8-PDFNU (5x6)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 25A (Tc)
Drain to Source Voltage (Vdss): 60V
Power - Max: 2.5W (Ta), 48W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 60V 6A 8PDFNU
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: 8-PDFNU (5x6)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 25A (Tc)
Drain to Source Voltage (Vdss): 60V
Power - Max: 2.5W (Ta), 48W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| TQM300NB06DCR RLG |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 25A; 48W; PDFN56U
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 25A
Power dissipation: 48W
Case: PDFN56U
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 25A; 48W; PDFN56U
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 25A
Power dissipation: 48W
Case: PDFN56U
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.