TQM84KDCU6 RFG Taiwan Semiconductor Corporation
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET 2P-CH 60V 0.17A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 320mW (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 38.2pF @ 30V
Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.9nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-363
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2P-CH 60V 0.17A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 320mW (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 38.2pF @ 30V
Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.9nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-363
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2700 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 13+ | 27.32 грн |
| 20+ | 16.10 грн |
| 100+ | 10.12 грн |
| 500+ | 7.04 грн |
| 1000+ | 6.24 грн |
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Технічний опис TQM84KDCU6 RFG Taiwan Semiconductor Corporation
Description: MOSFET 2P-CH 60V 0.17A SOT363, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: 2 P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 320mW (Ta), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 170mA (Ta), Input Capacitance (Ciss) (Max) @ Vds: 38.2pF @ 30V, Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V, Gate Charge (Qg) (Max) @ Vgs: 1.9nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: SOT-363, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції TQM84KDCU6 RFG
| Фото | Назва | Виробник | Інформація |
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Ціна |
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TQM84KDCU6 RFG | Виробник : Taiwan Semiconductor Corporation |
Description: MOSFET 2P-CH 60V 0.17A SOT363 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 320mW (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 38.2pF @ 30V Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V Gate Charge (Qg) (Max) @ Vgs: 1.9nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-363 Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
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| TQM84KDCU6 RFG | Виробник : TAIWAN SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -60V; -170mA; 320mW; SOT363 Drain-source voltage: -60V Drain current: -0.17A On-state resistance: 6Ω Type of transistor: P-MOSFET x2 Power dissipation: 0.32W Polarisation: unipolar Kind of package: tape Gate charge: 1.9nC Kind of channel: enhancement Gate-source voltage: ±20V Mounting: SMD Case: SOT363 |
товару немає в наявності |