TS10P06G Taiwan Semiconductor Corporation
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 800V 10A TS-6P
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Average Rectified (Io): 10 A
Voltage - Peak Reverse (Max): 800 V
Supplier Device Package: TS-6P
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, TS-6P
Packaging: Tube
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 107.47 грн |
| 15+ | 86.12 грн |
| 105+ | 68.53 грн |
| 510+ | 54.42 грн |
| 1005+ | 46.17 грн |
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Технічний опис TS10P06G Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 800V 10A TS-6P, Current - Reverse Leakage @ Vr: 10 µA @ 800 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A, Current - Average Rectified (Io): 10 A, Voltage - Peak Reverse (Max): 800 V, Supplier Device Package: TS-6P, Technology: Standard, Operating Temperature: -55°C ~ 150°C (TJ), Diode Type: Single Phase, Mounting Type: Through Hole, Package / Case: 4-SIP, TS-6P, Packaging: Tube.