TSC5802DCHC5G Taiwan Semiconductor Corporation
Виробник: Taiwan Semiconductor Corporation
Description: TRANS NPN 450V 2.5A TO251
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 5V
Current - Collector Cutoff (Max): 250µA
Vce Saturation (Max) @ Ib, Ic: 3V @ 600mA, 2A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Power - Max: 30 W
Voltage - Collector Emitter Breakdown (Max): 450 V
Current - Collector (Ic) (Max): 2.5 A
Part Status: Active
Supplier Device Package: TO-251 (IPAK)
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Технічний опис TSC5802DCHC5G Taiwan Semiconductor Corporation
Description: TRANS NPN 450V 2.5A TO251, DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 5V, Current - Collector Cutoff (Max): 250µA, Vce Saturation (Max) @ Ib, Ic: 3V @ 600mA, 2A, Operating Temperature: 150°C (TJ), Transistor Type: NPN, Mounting Type: Through Hole, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Packaging: Tube, Power - Max: 30 W, Voltage - Collector Emitter Breakdown (Max): 450 V, Current - Collector (Ic) (Max): 2.5 A, Part Status: Active, Supplier Device Package: TO-251 (IPAK).
Інші пропозиції TSC5802DCHC5G
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
TSC5802DCH C5G | Taiwan Semiconductor |
 Bipolar Transistors - BJT TO-251 1050V 2.5A NPN Bplr Trans |
товару немає в наявності |
В кошику од. на суму грн. |
| TSC5802DCH C5G |
|
Виробник: Taiwan Semiconductor
Bipolar Transistors - BJT TO-251 1050V 2.5A NPN Bplr Trans
Bipolar Transistors - BJT TO-251 1050V 2.5A NPN Bplr Trans
товару немає в наявності
В кошику
од. на суму грн.