Технічний опис TSC5802DCH C5G Taiwan Semiconductor
Description: TRANS NPN 450V 2.5A TO251, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 3V @ 600mA, 2A, Current - Collector Cutoff (Max): 250µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 5V, Supplier Device Package: TO-251 (IPAK), Part Status: Active, Current - Collector (Ic) (Max): 2.5 A, Voltage - Collector Emitter Breakdown (Max): 450 V, Power - Max: 30 W.
Інші пропозиції TSC5802DCH C5G
| Фото | Назва | Виробник | Інформація |
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TSC5802DCHC5G | Виробник : Taiwan Semiconductor Corporation |
Description: TRANS NPN 450V 2.5A TO251 Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3V @ 600mA, 2A Current - Collector Cutoff (Max): 250µA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 5V Supplier Device Package: TO-251 (IPAK) Part Status: Active Current - Collector (Ic) (Max): 2.5 A Voltage - Collector Emitter Breakdown (Max): 450 V Power - Max: 30 W |
товару немає в наявності |
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TSC5802DCH C5G | Виробник : Taiwan Semiconductor |
 Bipolar Transistors - BJT TO-251 1050V 2.5A NPN Bplr Trans |
товару немає в наявності |