Технічний опис TSC966CT A3G Taiwan Semiconductor
Description: TRANS NPN 400V 0.3A TO92, Packaging: Tape & Box (TB), Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA, Current - Collector Cutoff (Max): 1µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V, Frequency - Transition: 50MHz, Supplier Device Package: TO-92, Part Status: Obsolete, Current - Collector (Ic) (Max): 300 mA, Voltage - Collector Emitter Breakdown (Max): 400 V, Power - Max: 1 W.
Інші пропозиції TSC966CT A3G
| Фото | Назва | Виробник | Інформація |
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TSC966CT A3G | Виробник : Taiwan Semiconductor Corporation |
 Description: TRANS NPN 400V 0.3A TO92Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Frequency - Transition: 50MHz Supplier Device Package: TO-92 Part Status: Obsolete Current - Collector (Ic) (Max): 300 mA Voltage - Collector Emitter Breakdown (Max): 400 V Power - Max: 1 W |
товару немає в наявності |
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TSC966CT A3G | Виробник : Taiwan Semiconductor |
Bipolar Transistors - BJT NPN Silicon Planar Medium Power Transistor |
товару немає в наявності |