TSC966CT A3G

TSC966CT A3G Taiwan Semiconductor


1521224891271241tsc966_e15.pdf Виробник: Taiwan Semiconductor
Trans GP BJT NPN 400V 0.3A 900mW 3-Pin TO-92 Ammo
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Технічний опис TSC966CT A3G Taiwan Semiconductor

Description: TRANS NPN 400V 0.3A TO92, Packaging: Tape & Box (TB), Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA, Current - Collector Cutoff (Max): 1µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V, Frequency - Transition: 50MHz, Supplier Device Package: TO-92, Part Status: Obsolete, Current - Collector (Ic) (Max): 300 mA, Voltage - Collector Emitter Breakdown (Max): 400 V, Power - Max: 1 W.

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TSC966CT A3G TSC966CT A3G Виробник : Taiwan Semiconductor Corporation TSC966_F1801.pdf Description: TRANS NPN 400V 0.3A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 1 W
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TSC966CT A3G TSC966CT A3G Виробник : Taiwan Semiconductor TSC966_E15-1115588.pdf Bipolar Transistors - BJT NPN Silicon Planar Medium Power Transistor
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