TSM011NM03LCR RGG Taiwan Semiconductor Corporation

Description: 30V, 120A, SINGLE, N-CHANNEL LOW, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 1.1mOhm @ 20A, 10V, Power Dissipation (Max): 96W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-PDFN (5x6), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4378 pF @ 15 V, Qualification: AEC-Q101.