Технічний опис TSM043NB04CZ C0G Taiwan Semiconductor
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 40V; 124A; 125W; TO220AB, On-state resistance: 43.5mΩ, Mounting: THT, Power dissipation: 125W, Gate charge: 74nC, Polarisation: unipolar, Drain current: 124A, Kind of channel: enhancement, Drain-source voltage: 40V, Type of transistor: N-MOSFET, Gate-source voltage: ±20V, Kind of package: tube, Case: TO220AB.
Інші пропозиції TSM043NB04CZ C0G
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
TSM043NB04CZ C0G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 124A; 125W; TO220AB On-state resistance: 43.5mΩ Mounting: THT Power dissipation: 125W Gate charge: 74nC Polarisation: unipolar Drain current: 124A Kind of channel: enhancement Drain-source voltage: 40V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: tube Case: TO220AB |
товару немає в наявності |
В кошику од. на суму грн. |
| TSM043NB04CZ C0G |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 124A; 125W; TO220AB
On-state resistance: 43.5mΩ
Mounting: THT
Power dissipation: 125W
Gate charge: 74nC
Polarisation: unipolar
Drain current: 124A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO220AB
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 124A; 125W; TO220AB
On-state resistance: 43.5mΩ
Mounting: THT
Power dissipation: 125W
Gate charge: 74nC
Polarisation: unipolar
Drain current: 124A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO220AB
товару немає в наявності
В кошику
од. на суму грн.