TSM045NB06CR RLG Taiwan Semiconductor Corporation
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 60V 16A/104A 8PDFN
Power Dissipation (Max): 3.1W (Ta), 136W (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 104A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerLDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 6870 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 8-PDFN (5.2x5.75)
Vgs(th) (Max) @ Id: 4V @ 250µA
| Кількість | Ціна |
|---|---|
| 2500+ | 53.69 грн |
| 5000+ | 49.76 грн |
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Технічний опис TSM045NB06CR RLG Taiwan Semiconductor Corporation
Description: MOSFET N-CH 60V 16A/104A 8PDFN, Power Dissipation (Max): 3.1W (Ta), 136W (Tc), Rds On (Max) @ Id, Vgs: 5mOhm @ 16A, 10V, Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 104A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerLDFN, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 6870 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: 8-PDFN (5.2x5.75), Vgs(th) (Max) @ Id: 4V @ 250µA.
Інші пропозиції TSM045NB06CR RLG за ціною від 51.07 грн до 118.67 грн
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TSM045NB06CR RLG | Taiwan Semiconductor Corporation |
Description: MOSFET N-CH 60V 16A/104A 8PDFN Input Capacitance (Ciss) (Max) @ Vds: 6870 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: 8-PDFN (5.2x5.75) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 3.1W (Ta), 136W (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 16A, 10V Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 104A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerLDFN Packaging: Cut Tape (CT) |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
|
| TSM045NB06CR RLG |
|
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 60V 16A/104A 8PDFN
Input Capacitance (Ciss) (Max) @ Vds: 6870 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 8-PDFN (5.2x5.75)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 136W (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 104A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerLDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 60V 16A/104A 8PDFN
Input Capacitance (Ciss) (Max) @ Vds: 6870 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 8-PDFN (5.2x5.75)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 136W (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 104A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerLDFN
Packaging: Cut Tape (CT)
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 118.67 грн |
| 10+ | 95.23 грн |
| 100+ | 75.80 грн |
| 500+ | 60.19 грн |
| 1000+ | 51.07 грн |