TSM052NB03CR RLG Taiwan Semiconductor Corporation
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 30V 17A/90A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 90A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 17A, 10V
Power Dissipation (Max): 3.1W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2294 pF @ 15 V
Description: MOSFET N-CH 30V 17A/90A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 90A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 17A, 10V
Power Dissipation (Max): 3.1W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2294 pF @ 15 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 23.59 грн |
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Технічний опис TSM052NB03CR RLG Taiwan Semiconductor Corporation
Description: MOSFET N-CH 30V 17A/90A 8PDFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 90A (Tc), Rds On (Max) @ Id, Vgs: 5.2mOhm @ 17A, 10V, Power Dissipation (Max): 3.1W (Ta), 83W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-PDFN (5x6), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2294 pF @ 15 V.
Інші пропозиції TSM052NB03CR RLG за ціною від 20.78 грн до 67.2 грн
| Фото | Назва | Виробник | Інформація |
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TSM052NB03CR RLG | Виробник : Taiwan Semiconductor Corporation |
Description: MOSFET N-CH 30V 17A/90A 8PDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 90A (Tc) Rds On (Max) @ Id, Vgs: 5.2mOhm @ 17A, 10V Power Dissipation (Max): 3.1W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PDFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2294 pF @ 15 V |
на замовлення 4980 шт: термін постачання 21-31 дні (днів) |
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TSM052NB03CR RLG | Виробник : Taiwan Semiconductor | MOSFET 30V, 90A, Single N-Channel Power MOSFET |
на замовлення 2494 шт: термін постачання 21-30 дні (днів) |
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