TSM056NH04LCR RLG Taiwan Semiconductor Corporation
Виробник: Taiwan Semiconductor Corporation
Description: 40V, 54A, SINGLE N-CHANNEL POWER
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 54A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 27A, 10V
Power Dissipation (Max): 78.9W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 30.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 25 V
Description: 40V, 54A, SINGLE N-CHANNEL POWER
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 54A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 27A, 10V
Power Dissipation (Max): 78.9W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 30.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 25 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 33.89 грн |
Відгуки про товар
Написати відгук
Технічний опис TSM056NH04LCR RLG Taiwan Semiconductor Corporation
Description: 40V, 54A, SINGLE N-CHANNEL POWER, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 54A (Tc), Rds On (Max) @ Id, Vgs: 5.6mOhm @ 27A, 10V, Power Dissipation (Max): 78.9W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: 8-PDFNU (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 30.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 25 V.
Інші пропозиції TSM056NH04LCR RLG за ціною від 31.24 грн до 93.47 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
TSM056NH04LCR RLG | Виробник : Taiwan Semiconductor Corporation |
Description: 40V, 54A, SINGLE N-CHANNEL POWER Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 54A (Tc) Rds On (Max) @ Id, Vgs: 5.6mOhm @ 27A, 10V Power Dissipation (Max): 78.9W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-PDFNU (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 30.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 25 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
 |
TSM056NH04LCR RLG | Виробник : Taiwan Semiconductor | MOSFET 40V, 54A, Single N-Channel Power MOSFET |
на замовлення 2500 шт: термін постачання 21-30 дні (днів) |
|