TSM056NH04LCV RGG Taiwan Semiconductor Corporation
Виробник: Taiwan Semiconductor Corporation
Description: 40V, 54A, SINGLE N-CHANNEL POWER
Input Capacitance (Ciss) (Max) @ Vds: 2076 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-PDFN (3.1x3.1)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 34W (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 27A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 54A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
| Кількість | Ціна |
|---|---|
| 5000+ | 31.77 грн |
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Технічний опис TSM056NH04LCV RGG Taiwan Semiconductor Corporation
Description: 40V, 54A, SINGLE N-CHANNEL POWER, Input Capacitance (Ciss) (Max) @ Vds: 2076 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±16V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: 8-PDFN (3.1x3.1), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Power Dissipation (Max): 34W (Tc), Rds On (Max) @ Id, Vgs: 5.6mOhm @ 27A, 10V, Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 54A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerWDFN, Packaging: Tape & Reel (TR).
Інші пропозиції TSM056NH04LCV RGG за ціною від 32.21 грн до 128.81 грн
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TSM056NH04LCV RGG | Taiwan Semiconductor Corporation |
Description: 40V, 54A, SINGLE N-CHANNEL POWER Vgs(th) (Max) @ Id: 2.2V @ 250µA Power Dissipation (Max): 34W (Tc) Rds On (Max) @ Id, Vgs: 5.6mOhm @ 27A, 10V Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 54A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 2076 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±16V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-PDFN (3.1x3.1) |
на замовлення 9955 шт: термін постачання 21-31 дні (днів) |
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TSM056NH04LCV RGG | Taiwan Semiconductor |
MOSFETs 40V, 54A, Single N-Channel Power MOSFET |
на замовлення 9799 шт: термін постачання 21-30 дні (днів) |
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| TSM056NH04LCV RGG |
|
Виробник: Taiwan Semiconductor Corporation
Description: 40V, 54A, SINGLE N-CHANNEL POWER
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 34W (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 27A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 54A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2076 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-PDFN (3.1x3.1)
Description: 40V, 54A, SINGLE N-CHANNEL POWER
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 34W (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 27A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 54A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2076 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-PDFN (3.1x3.1)
на замовлення 9955 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 125.00 грн |
| 10+ | 76.64 грн |
| 100+ | 51.53 грн |
| 500+ | 38.26 грн |
| 1000+ | 35.15 грн |
| TSM056NH04LCV RGG |
|
Виробник: Taiwan Semiconductor
MOSFETs 40V, 54A, Single N-Channel Power MOSFET
MOSFETs 40V, 54A, Single N-Channel Power MOSFET
на замовлення 9799 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 128.81 грн |
| 10+ | 81.68 грн |
| 100+ | 47.33 грн |
| 500+ | 37.41 грн |
| 1000+ | 34.39 грн |
| 2500+ | 32.63 грн |
| 5000+ | 32.21 грн |