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TSM100N06CZ C0G Taiwan Semiconductor

Name: TSM100N06CZ C0G
Brand: Taiwan Semiconductor
SKU: 150006-4
Price: 225720 UAH
Availability: BackOrder

Виробник: Taiwan Semiconductor
N Channel Power MOSFET

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Технічний опис TSM100N06CZ C0G Taiwan Semiconductor

Description: MOSFET N-CHANNEL 60V 100A TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 6.7mOhm @ 30A, 10V, Power Dissipation (Max): 167W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4382 pF @ 30 V.

Інші пропозиції TSM100N06CZ C0G

Назва	Виробник	Інформація	Доступність	Ціна
TSM100N06CZ C0G	Виробник : Taiwan Semiconductor Corporation	Description: MOSFET N-CHANNEL 60V 100A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 6.7mOhm @ 30A, 10V Power Dissipation (Max): 167W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4382 pF @ 30 V	товару немає в наявності	В кошику од. на суму грн.
TSM100N06CZ C0G	Виробник : Taiwan Semiconductor	MOSFET 60V, 100A, Single N-Channel Power MOSFET	товару немає в наявності	В кошику од. на суму грн.
TSM100N06CZ C0G	Виробник : TAIWAN SEMICONDUCTOR	Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 107W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 80A Power dissipation: 107W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 6.7mΩ Mounting: THT Gate charge: 81nC Kind of package: tube Kind of channel: enhancement	товару немає в наявності	В кошику од. на суму грн.