TSM110NB04DCR RLG Taiwan Semiconductor Corporation
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET 2N-CH 40V 10A 8PDFN
Part Status: Active
Supplier Device Package: 8-PDFN (5x6)
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1506pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 48A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 2W (Ta), 48W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 155°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
| Кількість | Ціна |
|---|---|
| 2500+ | 33.66 грн |
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Технічний опис TSM110NB04DCR RLG Taiwan Semiconductor Corporation
Description: MOSFET 2N-CH 40V 10A 8PDFN, Part Status: Active, Supplier Device Package: 8-PDFN (5x6), Vgs(th) (Max) @ Id: 4V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V, Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 1506pF @ 20V, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 48A (Tc), Drain to Source Voltage (Vdss): 40V, Power - Max: 2W (Ta), 48W (Tc), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 155°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).
Інші пропозиції TSM110NB04DCR RLG за ціною від 30.87 грн до 125.53 грн
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TSM110NB04DCR RLG | Taiwan Semiconductor Corporation |
Description: MOSFET 2N-CH 40V 10A 8PDFN Part Status: Active Supplier Device Package: 8-PDFN (5x6) Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1506pF @ 20V Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 48A (Tc) Drain to Source Voltage (Vdss): 40V Power - Max: 2W (Ta), 48W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 155°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
на замовлення 14882 шт: термін постачання 21-31 дні (днів) |
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TSM110NB04DCR RLG | Taiwan Semiconductor |
MOSFETs 40V, 48A, Dual N-Channel Power MOSFET |
на замовлення 3895 шт: термін постачання 21-30 дні (днів) |
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| TSM110NB04DCR RLG |
|
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET 2N-CH 40V 10A 8PDFN
Part Status: Active
Supplier Device Package: 8-PDFN (5x6)
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1506pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 48A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 2W (Ta), 48W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 155°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 40V 10A 8PDFN
Part Status: Active
Supplier Device Package: 8-PDFN (5x6)
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1506pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 48A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 2W (Ta), 48W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 155°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
на замовлення 14882 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 64.88 грн |
| 10+ | 50.66 грн |
| 100+ | 39.49 грн |
| 500+ | 32.83 грн |
| 1000+ | 32.19 грн |
| TSM110NB04DCR RLG |
|
Виробник: Taiwan Semiconductor
MOSFETs 40V, 48A, Dual N-Channel Power MOSFET
MOSFETs 40V, 48A, Dual N-Channel Power MOSFET
на замовлення 3895 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 125.53 грн |
| 10+ | 78.61 грн |
| 100+ | 45.85 грн |
| 500+ | 36.22 грн |
| 1000+ | 33.12 грн |
| 2500+ | 30.87 грн |