TSM120N06LCP ROG Taiwan Semiconductor Corporation
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 60V 70A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2118 pF @ 30 V
Description: MOSFET N-CHANNEL 60V 70A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2118 pF @ 30 V
на замовлення 47500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 26.62 грн |
| 5000+ | 24.42 грн |
| 12500+ | 23.29 грн |
| 25000+ | 21.82 грн |
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Технічний опис TSM120N06LCP ROG Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 60V 70A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 70A (Tc), Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V, Power Dissipation (Max): 125W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-252 (DPAK), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2118 pF @ 30 V.
Інші пропозиції TSM120N06LCP ROG за ціною від 23.57 грн до 69.55 грн
| Фото | Назва | Виробник | Інформація |
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TSM120N06LCP ROG | Виробник : Taiwan Semiconductor Corporation |
Description: MOSFET N-CHANNEL 60V 70A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2118 pF @ 30 V |
на замовлення 53988 шт: термін постачання 21-31 дні (днів) |
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TSM120N06LCP ROG | Виробник : Taiwan Semiconductor | MOSFET 60V, 70A, Single N-Channel Power MOSFET |
на замовлення 4677 шт: термін постачання 21-30 дні (днів) |
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TSM120N06LCP ROG | Виробник : Taiwan Semiconductor |
 Trans MOSFET N-CH 60V 10A 3-Pin(2+Tab) DPAK T/R |
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