TSM150NB04LCR RLG Taiwan Semiconductor Corporation

Description: MOSFET N-CH 40V 10A/41A 8PDFN, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 8-PDFN (5.2x5.75), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 3.1W (Ta), 56W (Tc), Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 41A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerLDFN, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 966 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V.